Nanotechnology
Enhancing the conductivity of transparent graphene films via doping
Ki Kang Kim1, Alfonso Reina2, Yumeng Shi3, Hyesung Park4, Lain-Jong Li3, Young Hee Lee5,6 and Jing Kong1,6
Published 28 June 2010 ? IOP Publishing Ltd
Nanotechnology, Volume 21, Number 28
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Cited by 111 articles
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Abstract
We report chemical doping (p-type) to reduce the sheet resistance of graphene films for the application of high-performance transparent conducting films. The graphene film synthesized by chemical vapor deposition was transferred to silicon oxide and quartz substrates using poly(methyl methacrylate). AuCl3 in nitromethane was used to dope the graphene films and the sheet resistance was reduced by up to 77% depending on the doping concentration. The p-type doping behavior was confirmed by characterizing the Raman G-band of the doped graphene film. Atomic force microscope and scanning electron microscope images reveal the deposition of Au particles on the film. The sizes of the Au particles are 10?100 nm. The effect of doping was also investigated by transferring the graphene films onto quartz and poly(ethylene terephthalate) substrates. The sheet resistance reached 150 Ω/sq at 87% transmittance, which is comparable to those of indium tin oxide conducting film. The doping effect was manifested only with 1?2 layer graphene but not with multi-layer graphene. This approach advances the numerous applications of graphene films as transparent conducting electrodes.
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